on-semiconductor, nvmfd5853nlt1g, mosfet-aec-q101-dual-n-ch-40v,

ON SEMICONDUCTOR NVMFD5853NLT1G Двойной МОП-транзистор, Двойной N Канал, 34 А, 40 В, 0.0084 Ом, 10 В, 2.4 В Новинка

panasonic-electronic-components, dz2j270m0l, diode-zener-200mw-27v-smini2-f5,

PANASONIC ELECTRONIC COMPONENTS DZ2J270M0L DIODE, ZENER, 200mW, 27V, SMini2-F5-B

vishay, si9407bdy-t1-ge3, mosfet-p-ch-60v-4-7a-8soic,

VISHAY SI9407BDY-T1-GE3 МОП-транзистор, P Канал, -4.7 А, -60 В, 0.1 Ом, -10 В, -3 В

diodes-inc, fmmt458, transistor-npn-sot-23,

DIODES INC. FMMT458 Биполярный транзистор, NPN, 400 В, 50 МГц, 500 мВт, 225 мА, 100 hFE

diodes-inc, zxmp6a18dn8ta, mosfet-pp-ch-60v-4-8a-so8,

DIODES INC. ZXMP6A18DN8TA МОП-транзистор, P Канал, -3.7 А, -60 В, 0.055 Ом, -10 В, -1 В

vishay, irfr430apbf, mosfet-n-500v-5a-d-pak,

VISHAY IRFR430APBF МОП-транзистор, N Канал, 5 А, 500 В, 1.7 Ом, 10 В, 4.5 В

multicomp, bav16ws-7-f, diode-ultrafast-recovery-300ma,

MULTICOMP BAV16WS-7-F DIODE, ULTRAFAST RECOVERY, 300mA, 75V, SOD-323-2

on-semiconductor, ntr4171pt1g, p-channel-mosfet-30v-3-5a-sot,

ON SEMICONDUCTOR NTR4171PT1G. P CHANNEL MOSFET, -30V, 3.5A SOT-23

panasonic-electronic-components, dz2j036m0l, diode-zener-200mw-3-6v-smini2,

PANASONIC ELECTRONIC COMPONENTS DZ2J036M0L DIODE, ZENER, 200mW, 3.6V, SMini2-F5-B

vishay, si7716adn-t1-ge3, mosfet-n-ch-30v-16a-powerpak8,

VISHAY SI7716ADN-T1-GE3 МОП-транзистор, N Канал, 16 А, 30 В, 0.0105 Ом, 10 В, 2.5 В